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| AlGaAs Beam Lead PIN Diode V 1.00 MA4AGBLP912 Features n n n n n n n Outline ( Topview ) Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection - + Description M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM's patent pending hetero-junction technology, produce less diode "On" resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance ( 4 ), low capacitance ( 20 fF ), and extremely fast switching speed, ( 5 nS ). They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Absolute Maximum Ratings @ +25 C1 Parameter Operating Temperature Maximum Rating -65 C to +125 C -65 C to +150 C +235 C for 10 sec. + 23 dBm C. W. 40 mA -50 V Applications The ultra low capacitance of the MA4AGBLP912 device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a simple + 5 V TTL gate driver. These AlGaAs diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. Storage Temperature Mounting Temperature C.W. Incident RF Power Forward D.C. Current Reverse D.C. Voltage @ -10 A 1. Exceeding any of these values may result in permanent damage AlGaAs Beam Lead PIN Diode Electrical Specifications @ TA = 25 C Parameters and Test Conditions Total Capacitance at -5 V at 10 GHz 1 MA4AGBLP912 V 1.00 Symbol and Unit Min. Ct Rs Vf Ir TL fF Ohms Volts nA nS - Units Typ. 20 4.0 1.36 Max. 22 4.9 1.50 Forward Resistance at +20 mA at 10 GHz 2 Forward Voltage at +10 mA Leakage Current at -40 V Minority Carrier Lifetime -50 5 -300 10 NOTES: 1. Reverse Bias Capacitance is measured as a Single Series diode at -5 V in a 50 test fixture at 10 GHz. 2. Forward Series Resistance is measured as a Single Series diode at 20 mA in a 50 test fixture at 10 GHz. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AlGaAs Beam Lead PIN Diode Assembly Considerations The following precautions should be observed to avoid damaging these chips. MA4AGBLP912 V 1.00 General Handling These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A vacuum pencil with a #27 tip is recommended for picking and placing. These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermocompression bonding, parallel-gap welding, solder reflow, and electrically conductive silver epoxy. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for More Detailed Assembly Instructions. Cleanliness These devices should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity Aluminum Gallium Arsenide PIN diodes are Class 1 ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Diode Model Rs Ls = 0.5 nH Ct 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AlGaAs Beam Lead PIN Diode Outline Dimensions -- Topview and Sideview MA4AGBLP912 V 1.00 C B G D A E F Dim A B C D E F G Mils 11.0 +/- 2.0 6.9 +/- 2.0 4.7 +/- 1.0 6.9 +/- 2.0 6.9 +/- 2.0 4.0+/- 2.0 24.8+/- 3.0 mm 0.28 +/- 0.05 0.18 +/- 0.05 0.12 +/- 0.025 0.18 +/- 0.05 0.18 +/- 0.05 0.10 +/- 0.05 0.63 +/- 0.75 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AlGaAs Beam Lead PIN Diode Diode SPICE Values MA4AGBLP912 V 1.00 MA4AGBPL912 SPICE Model PinDiodeModel Is=1.0E-14 A Vi=0.0 V wBv= 50 V wPmax= 100 mW e-= 8600 cm^2/V-sec Ffe= 1.0 Wi= 3.0 um Rr= 10 K Ohms Cjmin= 0.020 pF Tau= 10 nsec Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I) Cj0= 0.022 pF Vj= 1.35 V M= 0.5 Fc= 0.5 Imax= 0.04 A Kf= 0.0 Af=1.0 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 |
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